rb496ea diodes rev.b 1/3 schottky barrier diode rb496ea z applications low current rectification z features 1) small mold type (tsmd5) 2) low i r 3) high reliability z structure silicon epitaxial planer z dimensions (unit : mm) z land size figure (unit : mm) z structure z taping dimensions (unit : mm) z absolute maximum ratings (ta=25 q c) z electrical characteristic (ta=25 q c) symbol min. typ. max. unit v f 1 - - 0.35 v i f =0.5a v f 2 - - 0.40 v i f =1a reverse current i r - - 500 a v r =10v conditions parameter forward voltage symbol unit v r v io a i fsm a tj =? tstg =? (*1) rating of per diode junction temperature 125 storage temperature -40 to +125 average rectified forward current (*1) 1 forward current surge peak (60hz 1cyc) (*1) 10 parameter limits reverse voltage 20 :?:a::?:? :?:?:? :?:?:?:w:?::?:? :?:?:?:?:?:?:?:? :?:?:? :?:?:?:? :?:?:?:?:?:?:?:? :?:?:? :?:?:?:? :?:?:? :?:|:?::w:?:w:?:a::?:? :?:?:?:w::e:?:?::w:?:? :?:a:w:?:?:o:?:?::e:?:w:? :w:?:?:e r r r 9 9 9 ?9 &]o<?y+?: :* r
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